Property | Value |
Chemical Name | 1-(tert-Butyl)cyclopentyl Methacrylate (also known as 1-tert-Butylcyclopentyl 2-methylacrylate) |
CAS Number | 1179475-19-4 |
Molecular Formula | C₁₃H₂₂O₂ |
Molecular Weight | 210.31 g/mol |
Appearance | Likely colorless to pale yellow viscous liquid |
Boiling Point | Predicted 250–300 °C |
Density (at 25 °C) | Predicted 0.95–1.00 g/cm³ |
Refractive Index | Predicted 1.45–1.47 |
Flash Point | Predicted >100 °C |
Solubility in Water | Low (hydrophobic due to tert-butyl and cyclopentyl groups) |
Stability | Stable under normal conditions; polymerizes under heat, light, or radicals; typically stabilized with inhibitors (e.g., MEHQ) |
Description of 1-(tert-Butyl)cyclopentyl Methacrylate
1-(tert-Butyl)cyclopentyl Methacrylate (CAS: 1179475-19-4) is a specialized bulky alkyl methacrylate monomer with the molecular formula C₁₃H₂₂O₂. Featuring a tertiary-butyl group attached to a cyclopentyl ring, it provides enhanced hydrophobicity, steric hindrance, and acid-labile protection. The tert-butylcyclopentyl ester enables controlled deprotection under photoacid generation, improving resolution, etch resistance, and adhesion in chemically amplified resists. Its rigid alicyclic structure contributes to low optical absorption and high transparency at deep UV wavelengths.
Application of 1-(tert-Butyl)cyclopentyl Methacrylate
Monomer for 193 nm (ArF) Photoresists. This bulky methacrylate is a key monomer in chemically amplified photoresist polymers for 193 nm ArF lithography. Its acid-labile tert-butylcyclopentyl ester group enables efficient deprotection under photoacid catalysis, providing high resolution and excellent pattern fidelity in semiconductor manufacturing.
Etch-Resistant Photoresist Formulations. The rigid alicyclic cyclopentyl structure combined with the tert-butyl group imparts superior dry etch resistance and mechanical stability, making it ideal for advanced node patterning in integrated circuit production.
Adhesion and Line Edge Roughness Improvement. Incorporation of this monomer enhances resist adhesion to substrates and reduces line edge roughness (LER), contributing to higher yield and performance in nanoscale device fabrication.
Advanced Lithography Research. Used in the development of next-generation EUV and high-NA photoresists, offering tunable dissolution contrast and thermal stability for cutting-edge semiconductor processes.
Storage of 1-(tert-Butyl)cyclopentyl Methacrylate
It should be kept in a cool, dry, well-ventilated area at 2–10°C away from heat, sparks, open flames, and direct sunlight to prevent unintended polymerization. Keep containers tightly sealed under inert atmosphere (nitrogen preferred). Protect from strong oxidizers, radical initiators, and peroxides. Avoid prolonged exposure to air or moisture.
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